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DMG4800LK3
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* * * * * * * Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.33 grams (approximate)
NEW PRODUCT
D
D
G
D G
TOP VIEW
S
S
Equivalent Circuit
PIN OUT -TOP VIEW
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25C TA = 85C ID IDM Value 30 25 10.0 6.5 48 Unit V V A A
Continuous Drain Current (Note 3) Pulsed Drain Current (Note 4)
Thermal Characteristics
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25C Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.71 72.9 -55 to +150
Unit W C/W C
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature.
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
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DMG4800LK3
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Min 30 0.8 Typ 12 16 10 0.7 798 128 122 1.37 8.7 1.7 2.4 5.03 4.50 26.33 8.55 Max 1.0 100 1.6 17 24 1.0 Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 25V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 9A VGS = 4.5V, ID = 7A VDS = 10V, ID = 9A VGS = 0V, IS = 1A
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:
VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 5V, VDS = 15V, ID = 9A
VDD = 15V, VGS = 10V, RL = 15, RG = 6, ID = 1A
5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing.
30
VGS = 4.5V VGS = 4.0V
30
VDS = 5.0V
25
25
VGS = 3.5V VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT(A)
20
20
15
15
TA = 150C T A = 125C
10
VGS = 2.5V
10
5
VGS = 1.8V VGS = 2.0V
5
TA = 85C
TA = 25C T A = -55C
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig.1 Typical Output Characteristics 2
0
0
0.5 1 1.5 2 2.5 3 3.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics
4
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
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DMG4800LK3
RDS(on), DRAIN-SOURCE ON-RESISTANCE ()
RDS(on) DRAIN SOURCE ON-RESISTANCE ()
1
0.05
0.04
VGS = 4.5V
NEW PRODUCT
0.03
TA = 150C TA = 125C
0.1
0.02
TA = 85C TA = 25C
VGS = 2.5V
0.01
TA = -55C
VGS = 4.5V
0.01 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
VGS = 4.5A ID = 5A
0 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 5
30
1.6
0.05
RDS(ON), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.4
VGS = 10A ID = 10A
RDS(ON) STATIC DRAIN SOURCE ON-STATE RESISTANCE ()
0.04
1.2
0.03
VGS = 4.5A ID = 5A
1.0
0.02
0.8
0.01
VGS = 10A ID = 10A
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0 -50
0 25 50 75 100 125 150 TA AMBIENT TEMPERATURE (C) Fig. 6 Typical Static Drain-Source On-State Resistance vs. Ambient Temperature
-25
2.0 VGS(TH), GATE THRESHOLD VOLTAGE (V)
100,000
IDSS, LEAKAGE CURRENT (nA)
1.6
10,000
TA = 150C
1.2
ID = 1mA
1,000
TA = 125C
0.8
ID = 250A
100
TA = 85C
0.4
10
TA = 25C TA = -55C
0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0 -50
1
-25
5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Typical Drain-Source Leakage Current vs Voltage
0
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
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(c) Diodes Incorporated
DMG4800LK3
20
1,000
IS, SOURCE CURRENT (A)
16
TA = 25C
IGSS, LEAKAGE CURRENT(nA)
100
NEW PRODUCT
12
8
TA = 85C
TA = 125C
TA = 150C
10
TA = 25C TA = -55C
4
0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1.2
1 0 4 8 12 16 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 10 Gate-Source Leakage Current vs. Voltage
1,000 P(pk), PEAK TRANSIENT POWER (W)
100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 12 Single Pulse Maximum Power Dissipation
Single Pulse RJA = 77C/W RJA(t) = RJA * r(t) TJ - TA = P * RJA(t)
IGSS, LEAKAGE CURRENT(nA)
100
TA = 125C
T A = 150C
10
TA = 85C
TA = -55C
TA = 25C
1 0 4 8 12 16 20 VGS, GATE SOURCE VOLTAGE(V) Fig. 11 Gate-Source Leakage Current vs. Voltage
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 77C/W P(pk)
D = 0.02
0.01
D = 0.01
t1
D = 0.005 D = Single Pulse
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 13 Transient Thermal Response
10
100
1,000
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
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DMG4800LK3
Ordering Information
Part Number DMG4800LK3-13
Notes:
(Note 7) Case TO252-3L Packaging 2500 / Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
NEW PRODUCT
Marking Information
N4800L
YYWW
= Manufacturer's Marking N4800L = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)
Package Outline Dimensions
E b3
L3
D
b2 b
e
L4 A1 H A
a L SEATING PLANE C2
TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0 10 All Dimensions in mm
Suggested Pad Layout
X2
Y2 C Y1 Z
Dimensions Z X1 X2 Y1 Y2 C E1
Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3
X1
E1
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
5 of 6 www.diodes.com
October 2009
(c) Diodes Incorporated
DMG4800LK3
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
NEW PRODUCT
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMG4800LK3
Document number: DS31959 Rev. 2 - 2
6 of 6 www.diodes.com
October 2009
(c) Diodes Incorporated

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